parashar, Parag, Amity university, Haryana, india, India
-
Vol 1, No 1 (2013) - Articles
High Breakdown Voltage Analysis of DIMOSFET with Linear Doping Profile in the Drift Region for 3C-SiC Wafer
Abstract PDF
Journal ISSN 2321-4635
The Journal | Journal Issues Subscribe to notifications | Submission | Editorial Policies |